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Sapphire Surface Modification Enables Wafer-Scale 2D Semiconductor Growth (Peking U., CAS et al.)
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关键摘要
北大中科院团队实现2英寸单晶WS2/MoS2晶圆制备
- 提出同金属元素（W/Mo与Al）蓝宝石表面修饰新策略
- 成功制备2英寸单层WS2或MoS2单晶晶圆
- 成果发表于2026年《Nature Communications》开放获取
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正文提要
Researchers from Peking University, Chinese Academy of Sciences et al. published a technical paper titled “Homo-metal-element mediated surface modification of sapphire for robust epitaxy of wafer-scale single-crystalline 2D semiconductors.”
Abstract Excerpt: The paper presents a “homo-metal-element (W/Mo and Al) surface modification strategy of commercial C/M sapphire” and demonstrates “2-inch scale monolayer WS2 or MoS2 single-crystal wafers.”
Find the technical paper here. August 2026.
Wang, Jialong, Yihao Zheng, Qingsheng Zeng, Yuhang Jing, You Peng, Tong Zhou, Li Yin, et al. “Homo-Metal-Element Mediated Surface Modification of Sapphire for Robust Epitaxy of Wafer-Scale Single-Crystalline 2D Semiconductors.” Nature Communications, 2026. https://doi.org/10.1038/s41467-026-77131-w.
Open Access.
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