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Intrinsic Polarization Superjunctions Boost GaN-On-Silicon Power Devices (EPFL)
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关键摘要
Researchers from École Polytechnique Fédérale de Lausanne (EPFL) published a technical paper titled “Intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronics.…
- ” Abstract Excerpt: “III-nitride semiconductors combine a wide bandgap…
- Their lateral architecture also enables monolithic integration on cost…
- However, electric-field crowding, as well as surface and buffer trappi…
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正文提要
Researchers from École Polytechnique Fédérale de Lausanne (EPFL) published a technical paper titled “Intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronics.”
Abstract Excerpt:
“III-nitride semiconductors combine a wide bandgap with low sheet resistance and, thus, can be used for efficient power electronics. Their lateral architecture also enables monolithic integration on cost-effective silicon. However, electric-field crowding, as well as surface and buffer trapping, limit the breakdown voltage, degrade dynamic performance and reduce reliability. Here we report intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronics.”
Find the technical paper here. August 2026.
Mazzone, Luca, Yuan Zong, Hongkeng Zhu, Alessandro Mauro, and Elison Matioli. “Intrinsic Polarization Superjunctions in III-Nitride Heterostructures for Efficient Power Electronics.” Nature Electronics, 2026. https://doi.org/10.1038/s41928-026-01691-4. Open Access.
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