Verified
来源、主体与时间与首次落库记录一致。
| 文章 | CXMT reportedly begins risk production of HBM3E memory in breakthrough for Chinese DRAM production — company could be in mass production in 2027 |
| 信任等级 | Aggregate |
| 发布主体 | — |
| 来源 | https://www.tomshardware.com/pc-components/dram/cxmt-reportedly-begins-risk-production-of-hbm3e-memory-in-breakthrough-for-chinese-dram-production-company-could-be-in-mass-production-in-2027 |
| 创建时间 | Tuesday, 1 September 2026 - 19:00 |
| 已记录哈希 | 4941e54894a0df7b95df5303b06de082ffb8bc7505fa1d41895888dbd9d8be7a |
| 重算哈希 | 4941e54894a0df7b95df5303b06de082ffb8bc7505fa1d41895888dbd9d8be7a |
哈希算法：sha256(来源URL|主体ID|创建时间戳)，主体缺失时主体ID为 0。