Molecular Dynamics Study Explains Aluminum Dopant Activation In 4H-SiC (TU Wien, Silvaco)

Researchers from TU Wien and Silvaco Europe published a technical paper titled “The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers.”

Abstract Excerpt:

“The non-monotonic dependence of Al dopant activation on implantation temperature in 4H-SiC has been experimentally observed but its atomistic origin remains unclear. We present a molecular dynamics (MD) study of Al implantation in 4H-SiC at implantation temperatures of 500 K and 900 K, spanning seven doses from 1 × 10¹³ to 7.5 × 10¹⁴ cm⁻², to describe how implantation temperature and dose govern defect formation, defect evolution, and dopant activation during early-stage annealing. “

Find the technical paper here. July 2026.

Leroch, Sabine, Robert Stella, Andreas Hössinger, and Lado Filipovic. “The influence of implantation conditions on dopant activation in Al implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers.” Journal of Materials Chemistry C (2026). https://doi.org/10.1039/d6tc01299j

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